Samsung 4-Gbit flash memory for multimedia phones

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AlbertPacino

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Samsung Electronics said it has developed a 4-Gbit OneNAND flash memory component based on four 1-Gbit die in a single package.

The memory operates from a 1.8-volt supply and has a size of 11-mm by 13-mm by 1.4-mm.

"In addition to recently announced advances in next-generation mobile DRAM and multi-chip package (MCP) memory, the new four gigabit OneNAND will help to solidify our leadership position in the rapidly expanding mobile convergence market," said Tom Quinn, senior vice president of sales and marketing for Samsung Semiconductor, in a statement.

The 4-Gbit OneNAND boasts a sustained data read speed of 108-Mbytes per second four times faster than conventional NAND flash memory, and a write speed of 10-Mbyte/s, more than 60 times faster than NOR flash memory, Samsung said.

The company said it would begin mass production of the 4-Gbit OneNAND flash in July.

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