Source : Inquirer
University throws toys out of PRAM
A JAPANESE university is creating a technology which will revolutionise the switching speed for memory and displace flash as the current standard for removable devices.
According to the Nikkei Business Daily, boffins at Kanazawa University have created devices for phase change RAM (PRAM) which will switch between 1,000 and 10,000 times more than conventional PRAM and will work at 400,000 rewrite cycles.
The breakthrough uses a material made of antimony, selenium and tellurium, said Nikkei Business. The boffins anticipate the new techniques will succeed flash memory for removable devices.
University throws toys out of PRAM
A JAPANESE university is creating a technology which will revolutionise the switching speed for memory and displace flash as the current standard for removable devices.
According to the Nikkei Business Daily, boffins at Kanazawa University have created devices for phase change RAM (PRAM) which will switch between 1,000 and 10,000 times more than conventional PRAM and will work at 400,000 rewrite cycles.
The breakthrough uses a material made of antimony, selenium and tellurium, said Nikkei Business. The boffins anticipate the new techniques will succeed flash memory for removable devices.